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  Datasheet File OCR Text:
 Semiconductor
STC128M
NPN Silicon Transistor
Features
* * * * * Low saturation medium current application Extremely low collector saturation voltage Suitable for low voltage large current drivers High DC current gain and large current capability Low on resistance : RON=0.6(Max.) (IB=1mA)
Ordering Information
Type NO. STC128M Marking C128 Package Code TO-92M
Outline Dimensions
unit :
mm
4.00.1
0.44 REF 0.52 REF
1.27 Typ. 2.540.1.
1
2
3
14.00.40 0.7 Typ. 3.00.1 3.8 Min. 0.42 Typ.
3.00.1
PIN Connections 1. Emitter 2. Collector 3. Base
KST-1003-000
1
STC128M
Absolute maximum ratings
Characteristic
Collector-Base voltage Collector-Emitter voltage Emitter-base voltage Collector current Collector dissipation Junction temperature Storage temperature
Symbol
VCBO VCEO VEBO IC PC Tj Tstg
Ratings
20 15 6.5 1 400 150 -55~150
Unit
V V V A mW C C
Electrical Characteristics
Characteristic
Collector-base breakdown voltage Collector-Emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-Emitter saturation voltage Transistor frequency Collector output capacitance On resistance
Symbol
BVCBO BVCEO BVEBO ICBO IEBO hFE VCE(sat) fT Cob RON
Test Condition
IC=50A, IE=0 IC=1mA, IB=0 IE=50A, IC=0 VCB=20V, IE=0 VEB=6V, IC=0 VCE=1V, IC=100mA IC=500mA, IB=50mA VCE=5V, IC=50mA VCB=10V, IE=0, f=1MHz f=1KHz, IB=1Ma, VIN=0.3V
Min. Typ. Max.
20 15 6.5 150 0.1 260 5 0.6 0.1 0.1 0.3 -
Unit
V V V A A V MHz pF
KST-1003-000
2
STC128M
Electrical Characteristic Curves
Fig. 1 PC -Ta Fig. 1 COb-VCB
Fig. 3 hFE-IC
Fig. 1 VCE(sat)-IC
Fig. 4 RON-IB
KST-1003-000
3


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